Photo- and electro-luminescence studies of semipolar ( 11 2 ¯ 2 ) InxAl1−xN
Author:
Affiliation:
1. School of Materials Science and Engineering, Kyungpook National University, Daegu 41566, South Korea
Funder
National Research Foundation of Korea
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0005247
Reference31 articles.
1. Current status of AlInN layers lattice-matched to GaN for photonics and electronics
2. The reduction of efficiency droop by Al0.82In0.18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes
3. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
4. 284–300 nm Quaternary InAlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Si(111) Substrates
5. Influence of InN and AlN concentration on the compositional inhomogeneity and formation of InN-rich regions in InxAlyGa1−x−yN
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Room-temperature nonradiative recombination lifetimes in c-plane Al1−xInxN epilayers nearly and modestly lattice-matched to GaN (0.11 ≤ x ≤ 0.21);Journal of Applied Physics;2022-10-28
2. Reduced nonradiative recombination rates in c-plane Al0.83In0.17N films grown on a nearly lattice-matched GaN substrate by metalorganic vapor phase epitaxy;Applied Physics Letters;2021-08-30
3. Hole Trapping at Acceptor Impurities and Alloying Elements in AlN;physica status solidi (RRL) – Rapid Research Letters;2021-07-03
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