Temperature Dependent Capacitance–Voltage Analysis of Unintentionally Doped and Si Doped Al0.82In0.18N Grown on GaN-Reference-Cited by-同舟云学术

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Temperature Dependent Capacitance–Voltage Analysis of Unintentionally Doped and Si Doped Al0.82In0.18N Grown on GaN

Published:2011-10-01 Issue:10R Volume:50 Page:101001
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chung Roy B.,Bierwagen Oliver,Wu Feng,Keller Stacia,DenBaars Steven P.,Speck James S.,Nakamura Shuji

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference30 articles.

1. Statistical model of ternary group-III nitrides

2. High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN

3. Blue lasing at room temperature in an optically pumped lattice-matched AlInN/GaN VCSEL structure

4. Progresses in III-nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials

5. Current status of AlInN layers lattice-matched to GaN for photonics and electronics

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of traps in InAlN by optically and thermally stimulated deep level defect spectroscopies;Journal of Applied Physics;2018-10-14

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