Influence of neutron irradiation on deep levels in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy-Reference-Cited by-同舟云学术

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Influence of neutron irradiation on deep levels in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy

Published:2019-12-01 Issue:12 Volume:7 Page:121102
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Farzana Esmat¹^ORCID,Mauze Akhil²,Varley Joel B.³,Blue Thomas E.⁴,Speck James S.²,Arehart Aaron R.¹^ORCID,Ringel Steven A.¹

Affiliation:

1. Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA

2. Materials Department, University of California, Santa Barbara, California 93106, USA

3. Lawrence Livermore National Laboratory, Livermore, California 94550, USA

4. Mechanical and Aerospace Engineering, The Ohio State University, Columbus, Ohio 43210, USA

Funder

Air Force Office of Scientific Research

Defense Threat Reduction Agency

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5126463

Reference50 articles.

1. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

2. Demonstration of β-(AlxGa1−x)2O3/β-Ga2O3modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy

3. Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor

4. Ge doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy

5. Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition

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1. Strain mediated ultra-high electron mobility in Ge-doped two-dimensional Ga2O3;AIP Advances;2024-08-01

2. Ultra-high electron mobility in Sn-doped two-dimensional Ga₂O₃ modified by biaxial strain and electric field;Applied Physics Express;2024-08-01

3. Deep level traps in (010) β-Ga2O3 epilayers grown by metal organic chemical vapor deposition on Sn-doped β-Ga2O3 substrates;Journal of Applied Physics;2024-07-25

4. Effective P-type N-doped α-Ga2O3 from First-Principles Calculations;Journal of Superconductivity and Novel Magnetism;2024-05-20

5. Perspective on electrically active defects in β-Ga2O3 from deep-level transient spectroscopy and first-principles calculations;Journal of Applied Physics;2024-05-16

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