Abstract
Abstract
2D Ga2O3 exhibits overwhelming advantages over its bulk counterpart, whereas manipulating the carriers is rare. We report strain-dependent electronic structures and transport properties of Sn-doped 2D Ga2O3 using first-principles calculations with deformation potential theory. The band gaps are tunable from 2.23 eV to 1.20 eV due to the strain-mediated σ* anti-bonding and π bonding state variations. Specifically, ultra-high electron mobility of 22579.32 cm2V−1s−1 is predicated under 8% tensile. Further electric field modulations suggest the retaining of band gap and effective mass. These results highlight its property manipulations and nanoscale electronic applications.
Funder
Fundamental Research Funds for Central Universities of the Central South University
Scientific Research Foundation of Hunan Provincial Education Department
Natural Science Foundation of Fujian Province
Natural Science Foundation of Hunan Province