P-type β-Ga2O3 metal-semiconductor-metal solar-blind photodetectors with extremely high responsivity and gain-bandwidth product-Reference-Cited by-同舟云学术

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P-type β-Ga2O3 metal-semiconductor-metal solar-blind photodetectors with extremely high responsivity and gain-bandwidth product

Published:2020-08 Issue: Volume:14 Page:100226
ISSN:2542-5293
Container-title:Materials Today Physics
language:en
Short-container-title:Materials Today Physics

Author:

Jiang Z.X.,Wu Z.Y.^ORCID,Ma C.C.,Deng J.N.,Zhang H.^ORCID,Xu Y.,Ye J.D.,Fang Z.L.^ORCID,Zhang G.Q.,Kang J.Y.,Zhang T.-Y.

Funder

Shanghai Natural Science Foundation

National Postdoctoral Program for Innovative Talents

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Physics and Astronomy (miscellaneous),Energy (miscellaneous),General Materials Science

Reference99 articles.

1. A review of Ga2O3materials, processing, and devices

2. Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications - SiC, GaN, Ga2 O3 , and Diamond

3. Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, β-Ga2O3, and diamond

4. Npj 2D Mater;Wan;Appl,2017

5. Recent Progress in Solar-Blind Deep-Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

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