Capacitance behavior of InAlN Schottky diodes in presence of large concentrations of shallow and deep states related to oxygen
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4919846
Reference55 articles.
1. Anomalous Ion Channeling inAlInN/GaNBilayers: Determination of the Strain State
2. Current status of AlInN layers lattice-matched to GaN for photonics and electronics
3. High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN
4. Blue laser diodes including lattice-matched Al0.83In0.17N bottom cladding layer
5. Improved performance of InAlN-based Schottky solar-blind photodiodes
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2. Low background doping in AlInN grown on GaN via metalorganic vapor phase epitaxy;Journal of Crystal Growth;2020-10
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4. Photo- and electro-luminescence studies of semipolar ( 11 2 ¯ 2 ) InxAl1−xN;Journal of Applied Physics;2020-07-28
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