AlInN/GaN diodes for power electronic devices
Author:
Funder
National Science Foundation
Daniel E. ’39 and Patricia M. Smith Endowed Chair Professorship Fund
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
https://iopscience.iop.org/article/10.35848/1882-0786/abb180/pdf
Reference25 articles.
1. High voltage and high current density vertical GaN power diodes
2. A review of Ga2O3materials, processing, and devices
3. Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges
4. AlInN for Vertical Power Electronic Devices
5. Mg doping for p-type AlInN lattice-matched to GaN
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1. Growth and characterization of AlInN/GaN superlattices;Journal of Crystal Growth;2024-03
2. Structural and optical characterization of thin AlInN films on c-plane GaN substrates;Journal of Applied Physics;2023-08-17
3. Vacancy-type defects in AlInN/AlN/GaN structures probed by monoenergetic positron beam;Journal of Applied Physics;2023-06-08
4. Luminescence Characteristics of the MOCVD GaN Structures with Chemically Etched Surfaces;Materials;2023-04-27
5. Influence of growth parameters on microstructures and electrical properties of InxAl1−xN thin films using sputtering;Journal of Alloys and Compounds;2021-12
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