High voltage and high current density vertical GaN power diodes
Author:
Affiliation:
1. Sandia National LaboratoriesAlbuquerqueNew Mexico87185USA
2. Department of Electrical and Computer EngineeringLehigh UniversityBethlehemPA18015USA
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2016.1156
Reference11 articles.
1. An assessment of wide bandgap semiconductors for power devices
2. 3.7 kV Vertical GaN PN Diodes
3. 4-kV and 2.8-$\text{m}\Omega $ -cm2 Vertical GaN p-n Diodes With Low Leakage Currents
4. 400-A (Pulsed) Vertical GaN p-n Diode With Breakdown Voltage of 700 V
5. High breakdown single‐crystal GaN p–n diodes by molecular beam epitaxy;Qi M.;Appl. Phys. Lett.,2015
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