Influence of growth parameters on microstructures and electrical properties of InxAl1−xN thin films using sputtering
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference41 articles.
1. III-nitrides for energy production: photovoltaic and thermoelectric applications;Lu;Semicond. Sci. Technol.,2013
2. Thermal oxidation of AlInN for III-nitride electronic and optoelectronic devices;Peart;ACS Appl. Electron. Mater.,2019
3. Mechanical properties of single-phase Al1−In N films across the compositional range (0 ≤ x ≤ 0.7) grown by radio-frequency magnetron sputtering;Lv;Appl. Surf. Sci.,2020
4. AlxIn1−xN on Si (100) solar cells (x = 0–0.56) deposited by RF sputtering;Valdueza-Felip;Materials,2020
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3. Effects of Internal Relaxation of Biaxial Strain on Structural and Electronic Properties of In0.5Al0.5N Thin Film;Coatings;2022-04-28
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