Thermal Oxidation of AlInN for III-Nitride Electronic and Optoelectronic Devices-Reference-Cited by-同舟云学术

Thermal Oxidation of AlInN for III-Nitride Electronic and Optoelectronic Devices

Published:2019-07-12 Issue:8 Volume:1 Page:1367-1371
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Peart Matthew R.¹^ORCID,Wei Xiongliang¹,Borovac Damir¹,Sun Wei¹^ORCID,Tansu Nelson¹,Wierer Jonathan J.¹

Affiliation:

1. Center for Photonics and Nanoelectronics, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, Pennsylvania 18015, United States

Funder

Division of Electrical, Communications and Cyber Systems

Division of Materials Research

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.9b00266

Reference24 articles.

1. Surface Protection and Selective Masking during Diffusion in Silicon

2. Hydrolyzation oxidation of AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures and superlattices

3. Electrical properties of InAlP native oxides for metal–oxide–semiconductor device applications

4. Controlled steam oxidation of AlInAs for microelectronics and optoelectronics applications

5. Native‐oxide defined ring contact for low threshold vertical‐cavity lasers

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Bidirectional UV/violet heterojunction light-emitting diode with In0.27Al0.73N alloy film as electron transport layer;Journal of Alloys and Compounds;2024-10

2. Growth and characterization of AlInN/GaN superlattices;Journal of Crystal Growth;2024-03

3. Enhancement-Mode AlInN/GaN High-Electron-Mobility Transistors Enabled by Thermally Oxidized Gates;IEEE Transactions on Electron Devices;2024-02

4. The Preparation of Inxal1-Xn Thin Films and Investigation of the Electroluminescence Properties of the Uv-Violet Bidirectional Drive P-Gan/N-In0.27al0.73n Heterojunction Light-Emitting Diode;2024

5. WNxOy prepared by oxidation of tungsten nitride as alternative for the sputtered N doped WO3 photocatalyst;Journal of Materials Science: Materials in Electronics;2023-12-26