Improved performance of InAlN-based Schottky solar-blind photodiodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3142870
Reference16 articles.
1. Power electronics on InAlN/(In)GaN: Prospect for a record performance
2. Progress in AlInN–GaN Bragg reflectors: Application to a microcavity light emitting diode
3. High-sheet-charge–carrier-density AlInN∕GaN field-effect transistors on Si(111)
4. High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures
5. Crack-free highly reflective AlInN∕AlGaN Bragg mirrors for UV applications
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1. Characterization of the Micro-Structural Properties of InAlN/GaN Epilayer Grown by MOCVD;Crystals;2022-01-29
2. A MOVPE method for improving InGaN growth quality by pre-introducing TMIn*;Chinese Physics B;2021-01-01
3. A bi-layer buffer system AlN/Al1−xInxN to enable the growth of high crystal quality Al0.36In0.64N thin films on Si (111);CrystEngComm;2019
4. AlInN for Vertical Power Electronic Devices;IEEE Transactions on Electron Devices;2018-10
5. High-performance AlGaN-based solar-blind avalanche photodiodes with dual-periodic III–nitride distributed Bragg reflectors;Applied Physics Express;2017-02-09
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