High-sheet-charge–carrier-density AlInN∕GaN field-effect transistors on Si(111)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1828580
Reference19 articles.
1. AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy
2. Device characteristics of the GaN/InGaN-doped channel HFETs
3. InAlN/(In)GaN high electron mobility transistors: some aspects of the quantum well heterostructure proposal
4. Crystal Growth of High-Quality AlInN/GaN Superlattices and of Crack-Free AlN on GaN: Their Possibility of High Electron Mobility Transistor
5. InAlN/GaN Heterostructure Field-Effect Transistors Grown by Plasma-Assisted Molecular-Beam Epitaxy
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1. Combining x-ray real and reciprocal space mapping techniques to explore the epitaxial growth of semiconductors;Journal of Physics D: Applied Physics;2023-04-12
2. Scaling behavior of InAlN/GaN HEMTs on silicon for RF applications;Scientific Reports;2022-10-06
3. Stress relaxation in III-V nitrides: Investigation of metallic atoms interaction with the N-vacancy;Europhysics Letters;2022-03-01
4. Understanding High-Energy 75-MeV Sulfur-Ion Irradiation-Induced Degradation in GaN-Based Heterostructures: The Role of the GaN Channel Layer;IEEE Transactions on Electron Devices;2021-01
5. A review of GaN HEMT broadband power amplifiers;AEU - International Journal of Electronics and Communications;2020-03
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