A bi-layer buffer system AlN/Al1−xInxN to enable the growth of high crystal quality Al0.36In0.64N thin films on Si (111)-Reference-Cited by-同舟云学术

A bi-layer buffer system AlN/Al1−xInxN to enable the growth of high crystal quality Al0.36In0.64N thin films on Si (111)

Published:2019 Issue:35 Volume:21 Page:5211-5215
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Lu Wei¹²³⁴⁵,Wang Xiaoyi¹²³⁴⁵^ORCID,Ma Yongjun⁶⁷⁸⁵,Grasso Salvatore⁹¹⁰¹¹¹²¹³,Xu Ming¹²³⁴⁵

Affiliation:

1. Key Laboratory of Information Materials of Sichuan Province

2. School of Electrical and Information Engineering

3. Southwest University for Nationalities

4. Chengdu 610041

5. China

6. Southwest University Science and Technology

7. Analytical and Test Center

8. Mianyang 621010

9. Key laboratory of Advanced technologies of Materials

10. Ministry of Education

11. School of Materials Science and Engineering

12. Southwest Jiaotong University

13. Chengdu 610031

Abstract

We report a unique AlN/AlInN bi-layer buffer design to enable the growth of textured c-axis wurtzite Al_0.36In_0.64N epilayer on a Si (111) substrate, which creates the possibility to grow high crystal quality Al_0.36In_0.64N.

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/CE/C9CE00813F

Reference33 articles.

1. Emission characteristics of GaN-based blue lasers including a lattice matched Al0.83In0.17N optical blocking layer for improved optical beam quality

2. Improved performance of InAlN-based Schottky solar-blind photodiodes

3. Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer

4. Photoluminescence studies of high-quality InAlN layer lattice-matched to GaN grown by metal organic chemical vapor deposition

5. High-quality InAlN/GaN heterostructures grown by metal–organic vapor phase epitaxy

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