Resolving the EH6/7 level in 4H-SiC by Laplace-transform deep level transient spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4802248
Reference21 articles.
1. Operation of a 2500V 150A Si-IGBT / SiC Diode Module
2. Deep level defects in electron-irradiated 4H SiC epitaxial layers
3. Deep levels created by low energy electron irradiation in 4H-SiC
4. Investigation of deep levels in n-type 4H-SiC epilayers irradiated with low-energy electrons
5. Annealing behavior between room temperature and 2000 °C of deep level defects in electron-irradiated n-type 4H silicon carbide
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1. Comparing the effect between room temperature and low temperature heavy ion irradiation by deep level transient spectroscopy;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2024-05
2. Majority and Minority Carrier Traps in Manganese as‐Implanted and Postimplantation‐Annealed 4H‐SiC;physica status solidi (b);2022-09-23
3. Distinguishing the EH1 and S1 defects in n-type 4H-SiC by Laplace DLTS;Applied Physics Express;2022-09-09
4. M-center in low-energy electron irradiated 4H-SiC;Applied Physics Letters;2022-06-20
5. Study of minority carrier traps in p-GaN gate HEMT by optical deep level transient spectroscopy;Applied Physics Letters;2022-05-23
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