Annealing behavior between room temperature and 2000 °C of deep level defects in electron-irradiated n-type 4H silicon carbide
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2009816
Reference34 articles.
1. Deep level defects in electron-irradiated 4H SiC epitaxial layers
2. Understanding defects in semiconductors as key to advancing device technology
3. Alphabet luminescence lines in4H−SiC
4. Formation of the Z1,2 deep-level defects in 4H-SiC epitaxial layers: Evidence for nitrogen participation
5. Formation and annihilation of intrinsic-related defect centers in high energy electron-irradiated or ion-implanted 4H– and 6H–silicon carbide
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1. Defects evolution in n-type 4H-SiC induced by electron irradiation and annealing;Journal of Semiconductors;2024-07-01
2. Depth profiles of deep levels generated in the tail region of Al ion implantation into n-type 4H-SiC;Japanese Journal of Applied Physics;2024-06-03
3. β -rays induced displacement damage on epitaxial 4H-SiC revealed by exciton recombination;Applied Physics Letters;2024-01-22
4. Suppression of the Carbon Vacancy Traps and the Corresponding Leakage Current Reduction in 4H-SiC Diodes by Low-Temperature Implant Activation in Combination With Oxidation;IEEE Electron Device Letters;2023-04
5. Electrical characteristics and deep-level transient spectroscopy of a fast-neutron-irradiated 4H–SiC Schottky barrier diode;Nuclear Engineering and Technology;2023-01
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