Formation and annihilation of intrinsic-related defect centers in high energy electron-irradiated or ion-implanted 4H– and 6H–silicon carbide-Reference-Cited by-同舟云学术

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Formation and annihilation of intrinsic-related defect centers in high energy electron-irradiated or ion-implanted 4H– and 6H–silicon carbide

Published:2001-12 Issue: Volume:308-310 Page:633-636
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Weidner M.,Frank T.,Pensl G.,Kawasuso A.,Itoh H.,Krause-Rehberg R.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy

2. Deep level defects in electron-irradiated 4H SiC epitaxial layers

3. Generation and Annihilation of Intrinsic-Related Defect Centers in 4H/6H-SiC

4. A. Kawasuso, M. Weidner, F. Redmann, T. Frank, P. Sperr, R. Krause-Rehberg, G. Pensl, Vacancies in He-implanted 4H and 6H SiC epilayers studied by positron annihilation, in these Proceedings (ICDS-21), Physica B 308–310 (2001).

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