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Vacancies in He-implanted 4H and 6H SiC epilayers studied by positron annihilation

  • Published:2001-12 Issue: Volume:308-310 Page:660-663
  • ISSN:0921-4526
  • Container-title:Physica B: Condensed Matter
  • language:en
  • Short-container-title:Physica B: Condensed Matter

Author:

Kawasuso A.,Weidner M.,Redmann F.,Frank T.,Sperr P.,Krause-Rehberg R.,Triftshäuser W.,Pensl G.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Positron annihilation spectroscopy study of vacancy-type defects in He implanted polycrystalline α-SiC;Journal of Nuclear Materials;2020-07

2. Silicon carbide and its composites for nuclear applications – Historical overview;Journal of Nuclear Materials;2019-12

3. Evolution of defects in silicon carbide implanted with helium ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2014-05

4. Helium interaction with vacancy-type defects created in silicon carbide single crystal;Journal of Nuclear Materials;2013-05

5. Nuclear reaction analysis of helium migration in silicon carbide;Journal of Nuclear Materials;2011-08
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