Evaluation of some basic positron-related characteristics of SiC
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.54.2512/fulltext
Reference21 articles.
1. Electrical and optical characterization of SiC
2. Interaction of positron beams with surfaces, thin films, and interfaces
3. First-principles study of fully relaxed vacancies in GaAs
4. Ab initiostudy of positron trapping at a vacancy in GaAs
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