Author:
Kamalakkannan K.,Lakshmanan C.,Rajaraman R.,Sundaravel B.,Amarendra G.,Sivaji K.
Subject
Instrumentation,Nuclear and High Energy Physics
Reference61 articles.
1. Advances in Silicon Carbide Processing and Applications;Saddow,2004
2. comparison of 6H-SiC, 3C-SiC, and Si for power devices;Bhatnagar;IEEE Trans. Electron Devices,1993
3. 6H-Silicon Carbide devices and applications;Palmour;Phys. B,1993
4. Thermal conductivity of pure and impure silicon, silicon carbide, and diamond;Slack;J. Appl. Phys.,1964
5. Breakdown field in vapor-grown silicon carbide p-n junctions;W. v. Muench, I. Pfaffeneder;J. Appl. Phys.,1977
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献