Suppression of the Carbon Vacancy Traps and the Corresponding Leakage Current Reduction in 4H-SiC Diodes by Low-Temperature Implant Activation in Combination With Oxidation-Reference-Cited by-同舟云学术

Suppression of the Carbon Vacancy Traps and the Corresponding Leakage Current Reduction in 4H-SiC Diodes by Low-Temperature Implant Activation in Combination With Oxidation

Published:2023-04 Issue:4 Volume:44 Page:578-581
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Lin Tianxiang¹^ORCID,Li Si-Hua¹,Ho Lok-Ping¹^ORCID,Kuznetsov Andrej²^ORCID,Lee Ho Nam³,Chau Tony³,Ling Francis Chi-Chung¹

Affiliation:

1. Department of Physics, The University of Hong Kong, Hong Kong, China

2. Department of Physics, University of Oslo, Oslo, Norway

3. Alpha Power Solutions Ltd., Hong Kong, China

Funder

Key-Area Research and Development Program of Guangdong Province

Innovation and Technology Fund, Hong Kong Special Administrative Region

Norwegian Micro and Nano-Fabrication Facility, NorFab, through the Research Council of Norway

International Partnerships for Excellent Education, Research and Innovation (INTPART) Program at the Research Council of Norway in Collaboration at The University of Hong Kong

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10081123/10036433.pdf?arnumber=10036433

Reference23 articles.

1. Oxidation-enhanced annealing of implantation-induced Z1/2centers in 4H-SiC: Reaction kinetics and modeling

2. Analytical model for reduction of deep levels in SiC by thermal oxidation

3. Annealing behavior between room temperature and 2000 °C of deep level defects in electron-irradiated n-type 4H silicon carbide

4. About the Electrical Activation of 1×10²⁰ cm^-3 Ion Implanted Al in 4H-SiC at Annealing Temperatures in the Range 1500 - 1950°C

5. Effect of high temperature annealing (T > 1650 °C) on the morphological and electrical properties of p-type implanted 4H-SiC layers

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1. Simultaneous improvement of high-frequency and Baliga figures of merit of 1.7 kV 4H-SiC MOSFET with retrograded JFET doping;Journal of Physics D: Applied Physics;2024-03-27

2. Correlations between reverse bias leakage current, cathodoluminescence intensity and carbon vacancy observed in 4H-SiC junction barrier Schottky diode;Semiconductor Science and Technology;2023-10-10