Oxidation-enhanced annealing of implantation-induced Z1/2centers in 4H-SiC: Reaction kinetics and modeling
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.86.075205/fulltext
Reference32 articles.
1. Transient enhanced diffusion of implanted boron in 4H-silicon carbide
2. Diffusion of nitrogen into silicon carbide single crystals doped with aluminum
3. The potential of diamond and SiC electronic devices for microwave and millimeter-wave power applications
4. Deep level defects in electron-irradiated 4H SiC epitaxial layers
5. Radiation-induced defect centers in 4H silicon carbide
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3. Suppression of the Carbon Vacancy Traps and the Corresponding Leakage Current Reduction in 4H-SiC Diodes by Low-Temperature Implant Activation in Combination With Oxidation;IEEE Electron Device Letters;2023-04
4. SiC detectors: A review on the use of silicon carbide as radiation detection material;Frontiers in Physics;2022-10-12
5. Majority and Minority Carrier Traps in Manganese as‐Implanted and Postimplantation‐Annealed 4H‐SiC;physica status solidi (b);2022-09-23
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