Majority and Minority Carrier Traps in Manganese as‐Implanted and Postimplantation‐Annealed 4H‐SiC
Author:
Affiliation:
1. Hitachi Energy Fabrikstrasse 3 5600 Lenzburg Switzerland
2. PGI-9 and JARA Forschnungzentrum Jülich 52428 Jülich Germany
3. CNR-IMM of Bologna via Gobetti 101 I-40129 Bologna Italy
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.202200210
Reference37 articles.
1. A.Mihaila L.Knoll E.Bianda M.Bellini S.Wirths G.Alfieri L.Kranz F.Canales M.Rahimo inProc. of IEEE Int. Electron Devices Meeting (IEDM) IEEE Piscataway NJ2018 p.19-2 https://doi.org/10.1109/IEDM.2018.8614480.
2. S.Wirths Y. C.Arango A.Prasmusinto G.Alfieri E.Bianda A.Mihaila L.Kranz M.Bellini L.Knoll in2019 31st Int. Symp. Power Semiconductor Devices and ICs (ISPSD) Shanghai2019 p.103 https://doi.org/10.1109/ISPSD.2019.8757601.
3. Evidence for carbon clusters present near thermal gate oxides affecting the electronic band structure in SiC-MOSFET
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