About the Electrical Activation of 1×10<sup>20</sup> cm<sup>-3</sup> Ion Implanted Al in 4H-SiC at Annealing Temperatures in the Range 1500

About the Electrical Activation of 1×10²⁰ cm^-3 Ion Implanted Al in 4H-SiC at Annealing Temperatures in the Range 1500 - 1950°C

Published:2018-06 Issue: Volume:924 Page:333-338
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Nipoti Roberta¹^ORCID,Carnera Alberto²,Alfieri Giovanni³,Kranz Lukas³

Affiliation:

1. CNR-IMM of Bologna

2. Università degli Studi di Padova

3. ABB Corporate Research

Abstract

The electrical activation of 1×1020cm-3implanted Al in 4H-SiC has been studied in the temperature range 1500 - 1950 °C by the analysis of the sheet resistance of the Al implanted layers, as measured at room temperature. The minimum annealing time for reaching stationary electrical at fixed annealing temperature has been found. The samples with stationary electrical activation have been used to estimate the thermal activation energy for the electrical activation of the implanted Al.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.924.333.pdf

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