Dynamic annealing in ion implanted SiC: Flux versus temperature dependence
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1622797
Reference15 articles.
1. Ion-beam induced damage and annealing behaviour in SiC
2. Damage accumulation and annealing in 6H–SiC irradiated with Si+
3. Ion-beam-induced epitaxial crystallization and amorphization in silicon
4. Comparative study of implantation‐induced damage in GaAs and Ge: Temperature and flux dependence
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