Comparative study of implantation‐induced damage in GaAs and Ge: Temperature and flux dependence
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105460
Reference9 articles.
1. Dose rate effects on damage accumulation in Si+‐implanted gallium arsenide
2. Silicon implantation into GaAs: Observations of dose rate dependent electrical activation and damage
3. Silicon implantation into GaAs: Observations of dose rate dependent electrical activation and damage
4. Dose rate effects on damage formation in ion-implanted gallium arsenide
5. The influence of dose rate and analysis procedures on measured damage in P+ ion implanted GaAs
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