Dose rate effects on damage accumulation in Si+‐implanted gallium arsenide
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104445
Reference18 articles.
1. Silicon implantation into GaAs: Observations of dose rate dependent electrical activation and damage
2. Flux, fluence and implantation temperature dependence of disorder produced by 40 keV N+ion irradiation of GaAs
3. The influence of dose rate and analysis procedures on measured damage in P+ ion implanted GaAs
4. Dose rate effects in indium implanted GaAs
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