The influence of dose rate and analysis procedures on measured damage in P+ ion implanted GaAs
Author:
Publisher
Informa UK Limited
Subject
General Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/01422448408209676
Reference8 articles.
1. Disorder dependence of ion implanted GaAs on the type of ion
2. The application of low angle Rutherford backscattering and channelling techniques to determine implantation induced disorder profile distributions in semiconductors
3. Flux, fluence and implantation temperature dependence of disorder produced by 40 keV N+ion irradiation of GaAs
4. Annealing studies of ion-implanted gaas in the 40–300 K range
Cited by 19 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Production of amorphous zones in GaAs by the direct impact of energetic heavy ions;Journal of Applied Physics;2000-01
2. Morphology of the implantation-induced disorder in GaAs studied by Raman spectroscopyand ion channeling;Physical Review B;1997-06-15
3. Relationship between implantation damage and electrical activation in gallium arsenide implanted with Si+;Applied Physics Letters;1994-02-21
4. Defect nucleation in weakly damaged ion implanted GaAs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-04
5. Lattice Damage in Ion-Implanted Compound Semiconductors and Its Effect on Electrical Activation;MRS Proceedings;1993
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3