Subject
Instrumentation,Nuclear and High Energy Physics
Cited by
8 articles.
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1. Defects and mechanical properties in weakly damaged Si ion implanted GaAs;Physical Review B;2019-06-24
2. Determination of lattice displacements in Se implanted InP by RBS and PIXE channeling experiments;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-03
3. Comparative study of damage production in ion implanted III–V-compounds at temperatures from 20 to 420 K;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-01
4. Determination of lattice displacements in 2 MeV Se+ implanted GaAs by RBS and PIXE channeling experiments;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-09
5. Sub-gap optical properties of ion implanted SiC;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-08