Comparative study of damage production in ion implanted III–V-compounds at temperatures from 20 to 420 K
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference51 articles.
1. Lattice Damage in Ion-Implanted Compound Semiconductors and Its Effect on Electrical Activation
2. Critical temperature and ion flux dependence of amorphization in GaAs
3. Temperature and dose dependence of damage production in Si+ and Se+ implanted InP
4. Ion mass and temperature dependence of damage production in ion implanted InP
5. Application of optical transmission spectroscopy to the investigation of defects in ion implanted GaAs
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1. Majority and Minority Carrier Traps in Manganese as‐Implanted and Postimplantation‐Annealed 4H‐SiC;physica status solidi (b);2022-09-23
2. Deep levels in ion implanted n-type homoepitaxial GaN: Ion mass, tilt angle and dose dependence;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2021-03
3. Defects and mechanical properties in weakly damaged Si ion implanted GaAs;Physical Review B;2019-06-24
4. Deep level study of beryllium implanted MOCVD homoepitaxial GaN;Japanese Journal of Applied Physics;2019-04-12
5. Introduction;Springer Theses;2018
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