Nucleation of damage centres during ion implantation of silicon-Reference-Cited by-同舟云学术

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Nucleation of damage centres during ion implantation of silicon

Published:1971-03 Issue:1-2 Volume:8 Page:77-86
ISSN:0033-7579
Container-title:Radiation Effects
language:en
Short-container-title:Radiation Effects

Author:

Chadderton Lewis T.

Publisher

Informa UK Limited

Subject

General Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00337577108231012

Reference32 articles.

1. Conversion of crystalline germanium to amorphous germanium by ion bombardment

2. Observation of ion bombardment damage in silicon

3. Eisen, F. H. and Welch, B. Proceedings of the First International Conference on Ion Implantation.Rad. Efects(to be published)

4. Chadderton, L. T. and Eisen, F. H. Proceedings of the First International Conference on Ion Implantation.Rad. Effects(to be published).

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