CMOS-Compatible Controlled Hyperdoping of Silicon Nanowires-Reference-Cited by-同舟云学术

CMOS-Compatible Controlled Hyperdoping of Silicon Nanowires

Published:2018-03-26 Issue:11 Volume:5 Page:1800101
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv. Mater. Interfaces

Author:

Berencén Yonder¹^ORCID,Prucnal Slawomir¹,Möller Wolfhard¹,Hübner René¹,Rebohle Lars¹,Böttger Roman¹,Glaser Markus²,Schönherr Tommy¹,Yuan Ye¹,Wang Mao¹,Georgiev Yordan M.¹,Erbe Artur¹,Lugstein Alois²,Helm Manfred¹³,Zhou Shengqiang¹,Skorupa Wolfgang¹

Affiliation:

1. Helmholtz-Zentrum Dresden-Rossendorf; Institute of Ion Beam Physics and Materials Research; Bautzner Landstraße 400 D-01328 Dresden Germany

2. Institute for Solid State Electronics; Vienna University of Technology; Floragasse 7 A-1040 Vienna Austria

3. Center for Advancing Electronics Dresden (cfaed); Technische Universität Dresden; 01062 Dresden Germany

Funder

Alexander von Humboldt-Stiftung

Bundesministerium für Bildung und Forschung

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Reference38 articles.

1. The promise and challenge of nanostructured solar cells

2. Core-shell silicon nanowire solar cells

3. Coaxial silicon nanowires as solar cells and nanoelectronic power sources

4. Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks

5. Targeted intracellular voltage recordings from dendritic spines using quantum-dot-coated nanopipettes

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