Observation of ion bombardment damage in silicon
Author:
Publisher
Informa UK Limited
Link
http://www.tandfonline.com/doi/pdf/10.1080/14786436808223192
Reference14 articles.
1. Damage to Silicon Produced by Bombardment with Helium Ions
2. On the structure and properties of some metal and metal oxide films
Cited by 226 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Influence of 700 keV O 3+ ion implantation on current transport properties of Cr/p-GaN SBD’s;Radiation Effects and Defects in Solids;2024-07-16
2. Near-surface damage and mixing in Si-Cl2-Ar atomic layer etching processes: Insights from molecular dynamics simulations;Journal of Vacuum Science & Technology A;2023-06-15
3. Effect of ion implantation on mechanical strength of silicon wafers;Japanese Journal of Applied Physics;2022-03-16
4. Ar Ion Irradiation Effects on the Characteristics of Ru|Pt|n-GaN Schottky Barrier Diodes;Semiconductors;2020-12
5. Proton radiation-induced enhancement of the dark conductivity of composite amorphous/nanocrystalline silicon thin films;Physical Review Materials;2020-05-26
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3