Annealing studies of ion-implanted gaas in the 40–300 K range
Author:
Publisher
Informa UK Limited
Subject
General Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00337578208211470
Reference12 articles.
1. Change in Thermal Conductivity upon Low-Temperature Electron Irradiation: GaAs
2. Electrical Studies of Low‐Temperature Neutron‐ and Electron‐Irradiated Epitaxial n‐Type GaAs
3. Reordering of implanted amorphous layers in gaas
4. Low‐temperature epitaxial regrowth of ion‐implanted amorphous GaAs
5. Ion implantation and low‐temperature epitaxial regrowth of GaAs
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1. XHRTEM observations of different damage structures in high temperature Zn+ implanted GaAs;Vacuum;2002-12
2. Temperature and ion flux dependence of damage structures in Zn+ implanted and laser annealed GaAs;Journal of Physics D: Applied Physics;2002-10-22
3. High resolution transmission electron microscopy of elevated temperature Zn+ implanted and low-power pulsed laser annealed GaAs;Journal of Applied Physics;2000-08-15
4. Production of amorphous zones in GaAs by the direct impact of energetic heavy ions;Journal of Applied Physics;2000-01
5. In situ RBS investigation of damage production during ion implantation in AlxGa1−xAs at 20 K;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-01
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