1. Recovery and accumulation of ion irradiation damage leading to dose rate dependence in GaAs;Japanese Journal of Applied Physics;2020-08-27
2. Characterization of gallium arsenide X-ray mesa p-i-n photodiodes at room temperature;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2016-03
3. Co-implantation of Al+, P+, and S+ with Si+ implants into In0.53Ga0.47As;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-09
4. Effect of high dose γ-ray irradiation on GaAs p-i-n photodetectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2015-06
5. Positron annihilation measurements in high-energy alpha-irradiated n-type Gallium Arsenide;Applied Physics A;2015-04-11