Electrical Studies of Neutron‐Irradiated p‐Type Silicon: Defect Structure and Annealing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1655953
Reference15 articles.
1. Distribution of Interstitials and Vacancies Produced by an Incident and Fast Neutron
2. Evidence for Damage Regions in Si, GaAs, and InSb Semiconductors Bombarded with High‐Energy Neutrons
3. Electrical Studies of Neutron-Irradiatedn-Type Si: Defect Structure and Annealing
4. Disordered Regions in Semiconductors Bombarded by Fast Neutrons
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1. A neutron damage study of liquid phase epitaxial GaAs and high purity silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-03
2. Comparison of 14 MeV neutron-induced and 1 MeV electron-induced radiation damage in crystalline silicon;Journal of Physics D: Applied Physics;1991-05-14
3. Carrier lifetime of silicon wafers doped by neutron transmutation;Semiconductor Science and Technology;1986-11-01
4. Neutron-induced trapping levels in aluminum gallium arsenide;Journal of Electronic Materials;1985-03
5. Spallation Neutron Damage in Group IV, III–V and II–VI Semiconductors at 5 K;Neutron Transmutation Doping of Semiconductor Materials;1984
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