The application of low angle Rutherford backscattering and channelling techniques to determine implantation induced disorder profile distributions in semiconductors-Reference-Cited by-同舟云学术

The application of low angle Rutherford backscattering and channelling techniques to determine implantation induced disorder profile distributions in semiconductors

Published:1980-01 Issue:1-3 Volume:168 Page:283-288
ISSN:0029-554X
Container-title:Nuclear Instruments and Methods
language:en
Short-container-title:Nuclear Instruments and Methods

Author:

Ahmed N.A.G.,Christodoulides C.E.,Carter G.,Nobes M.J.,Titov A.I.

Publisher

Elsevier BV

Subject

General Medicine

Reference24 articles.

1. Channelling,1973

2. Ion implantation in semiconductors;Chernow,1976

3. Ion implantation of semiconductors;Carter,1976

4. The application of high-resolution Rutherford backscattering techniques to near-surface analysis

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