Dose rate effects on damage formation in ion-implanted gallium arsenide
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference10 articles.
1. Silicon implantation into GaAs: Observations of dose rate dependent electrical activation and damage
2. these Proceedings 7th Int. Conf. on Ion Beam Modification of Materials;Moore,1991
3. Dose rate effects on damage accumulation in Si+‐implanted gallium arsenide
4. Dose rate effects in indium implanted GaAs
5. Flux, fluence and implantation temperature dependence of disorder produced by 40 keV N+ion irradiation of GaAs
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2. Radiation defect dynamics in GaAs studied by pulsed ion beams;Journal of Applied Physics;2018-07-14
3. Damage Formation, Amorphization and Crystallization in Semiconductors at Elevated Temperatures;Ion Beam Modification of Solids;2016
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5. High dose rate effects in silicon by plasma source ion implantation;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999
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