1950°C Post Implantation Annealing of Al+Implanted 4H-SiC: Relevance of the Annealing Time-Reference-Cited by-同舟云学术

1950°C Post Implantation Annealing of Al+Implanted 4H-SiC: Relevance of the Annealing Time

Author:

Fedeli P.^ORCID,Gorni M.,Carnera A.,Parisini A.,Alfieri G.,Grossner U.,Nipoti R.^ORCID

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference32 articles.

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5. http://www.raytheon.co.uk/capabilities/products/siliconcarbide/ (last access 2016-07-12).

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