TSiCV Based Silicon Carbide Interposer Technology
Author:
Affiliation:
1. Fraunhofer IZM,Dept. Wafer Level System Integration,Berlin,Germany
2. Fraunhofer IZM,Dept. RF & Smart Sensor System,Berlin,Germany
3. Technische Universität Berlin,Dept. Technologien der Mikroperipherik,Berlin,Germany
Funder
Deutsche Forschungsgemeinschaft (International Research Training Group GRK 1215, “Materials and Concepts for Advanced Interconnects”)
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10387937/10387754/10387967.pdf?arnumber=10387967
Reference19 articles.
1. Etching of SiC Using Inductively Coupled Plasma
2. Advances in backside via etching of SiC for GaN device applications;Barker,2013
3. Plasma Etching of Deep High-Aspect Ratio Features Into Silicon Carbide
4. Dry Etched Through SiC Via (TSiCV) Process Analysis Using DOE Modeling
5. 1950°C Post Implantation Annealing of Al+Implanted 4H-SiC: Relevance of the Annealing Time
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