M-center in low-energy electron irradiated 4<i>H</i>-SiC-Reference-Cited by-同舟云学术

M-center in low-energy electron irradiated 4H-SiC

Published:2022-06-20 Issue:25 Volume:120 Page:252101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Knežević T.¹^ORCID,Hadžipašić A.¹²^ORCID,Ohshima T.³^ORCID,Makino T.³^ORCID,Capan I.¹^ORCID

Affiliation:

1. Ruđer Bošković Institute, Bijenička 54, 10 000 Zagreb, Croatia

2. Faculty of Science, University of Sarajevo, Zmaja od Bosne 33-35, 71 000 Sarajevo, Bosnia and Herzegovina

3. National Institutes for Quantum Science and Technology, 1233 Watanuki, Takasaki 370-1292, Japan

Abstract

We report on the low-energy electron irradiated 4 H-SiC material studied by means of deep-level transient spectroscopy (DLTS) and Laplace-DLTS. Electron irradiation has introduced the following deep level defects: EH1 and EH3 previously assigned to carbon interstitial-related defects. We propose that EH1 and EH3 are identical to M1 and M3, also recently assigned to carbon interstitial defects, and assign them to [Formula: see text] and [Formula: see text], respectively.

Funder

North Atlantic Treaty Organization

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0095827

Reference20 articles.

1. Annealing behavior of the EB-centers and M-center in low-energy electron irradiated n-type 4H-SiC

2. Annealing behavior between room temperature and 2000 °C of deep level defects in electron-irradiated n-type 4H silicon carbide

3. Isothermal annealing study of the EH1 and EH3 levels in n-type 4H-SiC