Electrically active defects in irradiated 4H-SiC
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1689731
Reference16 articles.
1. Ion implantation induced defects in epitaxial 4H–SiC
2. Evidence for Two Charge States of the S-Center in Ion-Implanted 4H-SiC
3. Erratum: Negative-Ucenters in 4Hsilicon carbide [Phys. Rev. B58, R10 119 (1998)]
4. Implantation Temperature Dependent Deep Level Defects in 4H-SiC
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