Ion implantation induced defects in epitaxial 4H–SiC
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference13 articles.
1. Aluminum-implantation-induced deep levels in n-type 6H–SiC
2. Ion-beam induced damage and annealing behaviour in SiC
3. Ion Implantation and Annealing Effects in Silicon Carbide
4. Diffusion and Reaction Kinetics of Fast-Ion-Induced Point Defects Studied by Deep Level Transient Spectroscopy
5. Generation of vacancy-type point defects in single collision cascades during swift-ion bombardment of silicon
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