Aluminum-implantation-induced deep levels in n-type 6H–SiC
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368117
Reference12 articles.
1. Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide
2. Phosphorus and boron implantation in 6H–SiC
3. Deep level traps in the extended tail region of boron-implanted n-type 6H–SiC
4. Doping of SiC by Implantation of Boron and Aluminum
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2. Recrystallization effects of swift heavy 209 Bi ions irradiation on electrical degradation in 4H-SiC Schottky barrier diode;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2017-06
3. Blue photoluminescence enhancement in laser-irradiated 6H-SiC at room temperature;Applied Physics Letters;2014-01-27
4. (Invited) Assessment of Durable SiC JFET Technology for +600° to -125° Integrated Circuit Operation;ECS Transactions;2011-10-04
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