Deep level traps in the extended tail region of boron-implanted n-type 6H–SiC
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121076
Reference14 articles.
1. Boron-related deep centers in 6H-SiC
2. Al and B ion‐implantations in 6H‐ and 3C‐SiC
3. Ion-implantation doping of crystalline 6H-SiC
4. Aluminum and boron ion implantations into 6H-SiC epilayers
5. Phosphorus and boron implantation in 6H–SiC
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3. Blue photoluminescence enhancement in laser-irradiated 6H-SiC at room temperature;Applied Physics Letters;2014-01-27
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