Phosphorus and boron implantation in 6H–SiC
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.365236
Reference32 articles.
1. Progress in silicon carbide semiconductor electronics technology
2. Semi‐insulating 6H–SiC grown by physical vapor transport
3. Monolithic NMOS digital integrated circuits in 6H-SiC
4. 4H-SiC MESFET's with 42 GHz f/sub max/
5. Experimental demonstration of a buried-channel charge-coupled device in 6H silicon carbide
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1. Angular Distributions of Plasma Flows in a Vacuum Arc with Boride Cathodes;Russian Physics Journal;2018-01
2. Recent Progress in Ohmic Contacts to Silicon Carbide for High-Temperature Applications;Journal of Electronic Materials;2015-11-03
3. Phosphorus diffusion in nanocrystalline 3C-SiC;Applied Physics Letters;2015-03-30
4. Boron diffusion in nanocrystalline 3C-SiC;Applied Physics Letters;2014-05-26
5. Diffusion in Ceramics;Ceramics Science and Technology;2014-05-23
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