Boron diffusion in nanocrystalline 3C-SiC-Reference-Cited by-同舟云学术

Boron diffusion in nanocrystalline 3C-SiC

Published:2014-05-26 Issue:21 Volume:104 Page:213108
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Schnabel Manuel¹²,Weiss Charlotte¹,Canino Mariaconcetta³,Rachow Thomas¹,Löper Philipp¹,Summonte Caterina³,Mirabella Salvo⁴,Janz Stefan¹,Wilshaw Peter R.²

Affiliation:

1. Fraunhofer ISE, Heidenhofstr. 2, 79110 Freiburg, Germany

2. Department of Materials, University of Oxford, Parks Rd, Oxford OX1 3PH, United Kingdom

3. CNR-IMM, Via Piero Gobetti 101, 40129 Bologna, Italy

4. CNR-IMM MATIS, Via S. Sofia 64, 95123 Catania, Italy

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4880722

Reference52 articles.

1. Electrical Contacts to Beta Silicon Carbide Thin Films

2. A critical review of ohmic and rectifying contacts for silicon carbide

3. Influence of crystal quality on the electronic properties of n-type 3C-SiC grown by low temperature low pressure chemical vapor deposition

4. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices

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4. Publisher's Note: “Boron diffusion in nanocrystalline 3C-SiC” [Appl. Phys. Lett. 104, 213108 (2014)];Applied Physics Letters;2014-06-16