A critical review of ohmic and rectifying contacts for silicon carbide-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

A critical review of ohmic and rectifying contacts for silicon carbide

Published:1995-11 Issue:2-3 Volume:34 Page:83-105
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Porter Lisa M.,Davis Robert F.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference131 articles.

1. Surface States and Rectification at a Metal Semi-Conductor Contact

2. Optical properties of polytypes of SiC: interband absorption, and luminescence of nitrogen-exciton complexes;Choyke,1968

Cited by 394 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Toward a Metal-Free Contact Based on Multilayer Epitaxial Graphene on 4H-SiC;IEEE Electron Device Letters;2024-07

2. Formation of ohmic contacts on heavily Al⁺-implanted p-type SiC without an alloying process;Japanese Journal of Applied Physics;2024-05-01

3. Tunneling current through non-alloyed metal/heavily-doped SiC interfaces;Materials Science in Semiconductor Processing;2024-03

4. Opportunities and Challenges of Pressure Contact Packaging for Wide Bandgap Power Modules;IEEE Transactions on Power Electronics;2024-02

5. Insight on the recent materials advances for manufacturing of high-voltage transmission conductors;The International Journal of Advanced Manufacturing Technology;2024-01-16

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP