Tunneling current through non-alloyed metal/heavily-doped SiC interfaces-Reference-Cited by-同舟云学术

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Tunneling current through non-alloyed metal/heavily-doped SiC interfaces

Published:2024-03 Issue: Volume:171 Page:108023
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Hara Masahiro^ORCID,Kitawaki Takeaki,Tanaka Hajime,Kaneko Mitsuaki,Kimoto Tsunenobu

Funder

Program on Open Innovation Platform with Enterprises Research Institute and Academia

Japan Society for the Promotion of Science

Japan Science and Technology Agency

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference80 articles.

1. High performance of high-voltage 4H-SiC Schottky barrier diodes

2. SiC power-switching devices-the second electronics revolution?

3. Fundamentals of Power Semiconductor Devices;Baliga,2008

4. Material science and device physics in SiC technology for high-voltage power devices

5. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation of ohmic contacts on heavily Al⁺-implanted p-type SiC without an alloying process;Japanese Journal of Applied Physics;2024-05-01

2. Schottky contacts on sulfurized silicon carbide (4H-SiC) surface;Applied Physics Letters;2024-03-04

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