Phosphorus diffusion in nanocrystalline 3C-SiC
Author:
Affiliation:
1. Fraunhofer-Institute for Solar Energy Systems, Heidenhofstr. 2, D-79110 Freiburg, Germany
2. Department of Materials, University of Oxford, Parks Rd, Oxford OX1 3PH, United Kingdom
Funder
EU FP7/2007-2013: NASCEnT
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4916637
Reference41 articles.
1. Electrical Contacts to Beta Silicon Carbide Thin Films
2. A critical review of ohmic and rectifying contacts for silicon carbide
3. Influence of crystal quality on the electronic properties of n-type 3C-SiC grown by low temperature low pressure chemical vapor deposition
4. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices
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1. A novel visualization technique for measuring liquid diffusion coefficient based on asymmetric liquid-core cylindrical lens;Scientific Reports;2016-06-21
2. Monolithic Si nanocrystal/crystalline Si tandem cells involving Si nanocrystals in SiC;Progress in Photovoltaics: Research and Applications;2016-04-04
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