Defect levels induced by double substitution of B and N in 4H-SiC
Author:
Funder
National Research Foundation
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference33 articles.
1. The effects of high-energy proton irradiation on the electrical characteristics of Au/Ni/4H-SiC Schottky barrier diodes
2. Recombination centers in 4H-SiC investigated by electrically detected magnetic resonance and ab initio modeling
3. Capacitance spectroscopy of boron-doped silicon carbide;Ballandovich;Semiconductors,1995
4. Boron-vacancy complex in SiC
5. Evolution of Radiation Induced Defects in SiC: A Multiscale Simulation Approach;Jiang,2017
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